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Home » Components » Memory (Laptop) » DDR3 SODIM » Kingston ValueRAM 4GB (1x4GB) Memory Module 1066MHz DDR3 Non-ECC 204-pin SO-DIMM
Kingston ValueRAM 4GB (1x4GB) Memory Module 1066MHz DDR3 Non-ECC 204-pin SO-DIMM
Products model Model: KVR1066D3S7/4G
Manufacturer name Manufacturer : Kingston
Products price Price: £14.59 ex vat
Products price_ex Price: £17.50 inc vat
Availability: 283 Ready to ship!
Last Checked: 01:24:37 19/May


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Product Details

KVR1066D3S7/4G - Kingston ValueRAM 4GB (1x4GB) Memory Module 1066MHz DDR3 Non-ECC 204-pin SO-DIMM

DDR3 is the third generation of Double Data Rate (DDR) SDRAM memory. Similar to DDR2, it is a continuing evolution of DDR memory technology that delivers higher speeds (up to 1600 MHz), lower power consumption and heat dissipation. It is an ideal memory solution for bandwidth hungry systems equipped with dual and quad core processors and the lower power consumption is a perfect match for both server and mobile platforms. Dual In-line Memory Modules, or DIMMs, closely resemble SIMMs. Like SIMMs, most DIMMs install vertically into expansion sockets. The principal difference between the two is that on a SIMM, pins on opposite sides of the board are tied together to form one electrical contact; on a DIMM, opposing pins remain electrically isolated to form two separate contacts.
Kingston ValueRAM 4GB DDR3 1066MHz Non-ECC 204pin SO-DIMM Memory Module
Product Specifications


Memory
Memory Size 4096 MB ( 1 module(s) x 4096 MB )
Memory Type DDR3
Memory Speed 1066 MHz
Memory Package SO-DIMM
Pin Configuration 204 pins
Error Correction Non ECC
CAS Latency CL7
Connector Material Gold
Module Configuration 512M x 64

Electrical
Voltage 1.5 V

Physical
Form Factor 204-Pin SO-DIMM Module
Dimensions (W) x (D) x (H)
Features

  • JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
  • VDDQ = 1.5V (1.425V ~ 1.575V)
  • 667MHz fCK for 1333Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 9, 8, 7, 6
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
  • Asynchronous Reset
  • PCB : Height 1.180' (30.00mm), double sided component
Warranty

Lifetime warranty
Back Write Review
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